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| PHOTODIODE GaAsP photodiode G1126-02, G1127-02, G2119 Schottky type for UV to visible range Features Applications l Low dark current l High UV sensitivity l Analytical instruments l Color identification l UV detection s General ratings / Absolute maximum ratings Type No. G1126-02 G1127-02 G2119 Dimensional outline/ Window material /Q * /Q /Q Package TO-5 TO-8 Ceramic Active area size (mm) 2.3 x 2.3 4.6 x 4.6 10.1 x 10.1 Effective active area (mm2) 5.2 21 98 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C) 5 -10 to +60 -20 to +70 s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Peak Spectral sensitivity response waverange length p (nm) (nm) Photo sensitivity S (A/W) Hg GaP line LED 254 nm 560 nm Terminal Temp. Rise time Dark Short circuit capacitance coefficient tr current current Ct of VR=0 V Isc ID VR=0 V ID Max. RL=1 k He-Ne 100 lx TCID f=10 kHz laser Min. Typ. V4=10 mV VR=1 V 633 nm (pF) (A) (A) (pA) (pA) (times/C) (s) 0.25 0.3 5 50 3.5 1800 0.17 0.9 1.2 10 100 1.07 12 7000 5 6 100 5000 55 25000 Shunt resistance Rsh VR=10 mV NEP Type No. p G1126-02 G1127-02 190 to 680 610 0.18 0.035 0.17 G2119 * Window material Q: quartz glass Min. Typ. (G) (G) (W/Hz1/2) 2 15 5.8 x 10-15 1 8 8.0 x 10-15 0.1 0.7 2.4 x 10-14 GaAsP photodiode sSpectral response 0.3 (Typ. Ta=25 C) G1126-02, G1127-02, G2119 sPhoto sensitivity temperature characteristic +1.5 (Typ.) PHOTO SENSITIVITY (A/W) 0.25 TEMPERATURE COEFFICIENT (%/C) +1.0 0.2 0.15 +0.5 0.1 0 0.05 0 190 400 600 800 -0.5 190 400 600 800 WAVELENGTH (nm) KGPDB0034EA WAVELENGTH (nm) KGPDB0035EA sRise time vs. load resistance 10 ms G2119 1 ms G1127-02 (Typ. Ta=25 C, VR=0 V) sDark current vs. reverse voltage 1 nA (Typ. Ta=25 C) 100 pA G2119 100 s G1126-02 10 s DARK CURRENT RISE TIME G1127-02 10 pA G1126-02 1 pA 1 s 100 ns 2 10 103 104 105 106 100 fA 0.001 0.01 0.1 1 10 LOAD RESISTANCE () KGPDB0036EA REVERSE VOLTAGE (V) KGPDB0037EA GaAsP photodiode sShunt resistance vs. ambient temperature (Typ. VR=10 mV) 10 T G1126-02, G1127-02, G2119 sShort circuit current linearity 100 10 -2 (Typ. Ta=25 C, A light source fully illuminated) 1 T RL=100 OUTPUT CURRENT (A) SHUNT RESISTANCE 10 -4 100 G G1126-02 G1127-02 10-6 10-8 10 10 10 -10 10 G 1 G G2119 -12 100 M -14 10 M -20 0 20 40 60 80 DEPENDENT ON NEP 10-16 -16 -14 -12 -10 -8 -6 10 10 10 10 10 10 10 -4 10 -2 10 0 AMBIENT TEMPERATURE (C) KGPDB0038EA INCIDENT LIGHT LEVEL (lx) KGPDB0008EA sDimensional outlines (unit: mm) G1126-02 9.1 0.2 WINDOW 5.9 0.1 G1127-02 13.9 0.2 4.1 0.2 5.0 0.2 1.9 8.1 0.1 WINDOW 10.5 0.1 12.35 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 2.9 20 PHOTOSENSITIVE SURFACE 0.45 LEAD 7.5 0.2 5.08 0.2 MARK ( 1.4) CONNECTED TO CASE CONNECTED TO CASE KGPDA0006EA 15 KGPDA0007EA GaAsP photodiode G2119 16.5 0.2 G1126-02, G1127-02, G2119 ACTIVE AREA 15.0 0.15 0.1 PHOTOSENSITIVE SURFACE 0.3 0.9 0.5 LEAD 15.1 0.3 12.5 0.2 ANODE TERMINAL MARK 13.7 0.3 10.5 2.15 0.1 KGPDA0011EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1005E01 Apr. 2001 DN |
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